By Max Clarke
A ‘breakthrough’ in computer memory, enabling faster, lower cost and more durable storage has been developed by IBM (NYSE: IBM).
Researchers in IBM’s research body in Switzerland claim that the newly developed phase-change memory (PCM) will usher in a paradigm shift in enterprise IT and storage systems worldwide within the next 5 years.
PCM that can write and retrieve data 100 times faster than flash, enable high storage capacities and not lose data when the power is turned off. Unlike flash, PCM is also very durable and can endure at least 10 million write cycles, compared to current enterprise-class flash at 30,000 cycles or consumer-class flash at 3,000 cycles. While 3,000 cycles will out live many consumer devices, 30,000 cycles are orders of magnitude too low to be suitable for enterprise applications.
"As organizations and consumers increasingly embrace cloud-computing models and services, whereby most of the data is stored and processed in the cloud, ever more powerful and efficient, yet affordable storage technologies are needed," states Dr. Haris Pozidis, Manager of Memory and Probe Technologies at IBM Research — Zurich. "By demonstrating a multi-bit phase-change memory technology which achieves for the first time reliability levels akin to those required for enterprise applications, we made a big step towards enabling practical memory devices based on multi-bit PCM."
For demonstrating reliable read-out of data bits, the scientists needed to tackle the problem of resistance drift. Because of structural relaxation of the atoms in the amorphous state, the resistance increases over time after the phase change, eventually causing errors in the read-out. To overcome that issue, the IBM scientists applied an advanced modulation coding technique that is inherently drift-tolerant. The modulation coding technique is based on the fact that, on average, the relative order of programmed cells with different resistance levels does not change due to drift.
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